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Preliminary Technical Information
Polar TM HiPerFET TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFA6N120P
IXFP6N120P
IXFH6N120P
V DSS = 1200V
I D25 = 6A
R DS(on) ≤ 2.75 Ω
TO-263 AA (IXFA)
Fast Intrinsic Diode
G
S
D (Tab)
Symbol
V DSS
V DGR
V GSS
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Maximum Ratings
1200
1200
± 30
V
V
V
TO-220AB (IXFP)
DS
V GSM
I D25
I DM
I A
E AS
Transient
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
± 40
6
18
3
300
V
A
A
A
mJ
G
TO-247 (IXFH)
D (Tab)
dv/dt
P D
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
10
250
V/ns
W
G
D
S
D (Tab)
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate
S = Source
D = Drain
Tab = Drain
T L
T SOLD
M d
Weight
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 &TO-247)
TO-263
TO-220
TO-247
300
260
1.13 / 10
2.5
3.0
6.0
° C
° C
Nm/lb.in.
g
g
g
Features
International Standard Packages
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Diode
Low Q G
Low R DS(on)
Low Drain-to-Tab Capacitance
Low Package Inductance
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Advantages
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
1200
2.5
V
5.0 V
± 100 nA
10 μ A
1 mA
2.75 Ω
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
? 2011 IXYS CORPORATION, All Rights Reserved
DS100202B(04/11)
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制造商:IXYS Corporation 功能描述:MOSFET N TO-247